Journal article
Relevance of threading dislocations for the thermal oxidation of GaN (0001)



Publication Details
Authors:
Reiner, M.; Koller, C.; Pekoll, K.; Pietschnig, R.; Ostermaier, C.
Publisher:
Cambridge University PressDO - 10.1557/opl.2015.557
Publication year:
2015
Journal:
MRS Online Proceedings Library
Pages range:
1-6
Volume number:
1792
Start page:
1
End page:
6
ISSN:
1946-4274

Abstract
We demonstrate that interface roughening after dry thermal oxidn. of GaN (0001) is caused by crystal defects. Our results reveal enhanced vertical oxidn. at threading dislocations (TDs) and enhanced decompn. at these TDs. The transformation of GaN to Ga2O3 is significantly slower at defect free surface sites compared to TD areas. At T>950°C we find that oxidn. is kinetically controlled by the decompn. of GaN to Ga and N2 and subsequent oxidn. of the resulting Ga. Adding O2 to the system is promoting decompn., as the reaction has an exothermic enthalpy. Addnl., oxidn. promoted decompn. is shown on defect free surface areas, leading to voids and also rough surfaces. The obsd. interface roughness upon dry thermal oxidn. is therefore explained by inhomogeneous Ga supply between weak spots and defect free surface as well as the decompn. limited oxidn. [on SciFinder(R)]


Keywords
gallium nitride threading dislocation thermal oxidn


Authors/Editors

Last updated on 2018-04-12 at 16:16