Aufsatz in einer Fachzeitschrift
Telecom wavelength emitting single quantum dots coupled to InP-based photonic crystal microcavities



Details zur Publikation
Autor(inn)en:
Kors, A.; Fuchs, K.; Yacob, M.; Reithmaier, J.; Benyoucef, M.
Verlag:
AMER INST PHYSICS
Publikationsjahr:
2017
Zeitschrift:
Applied Physics Letters
Seitenbereich:
031101
Abkürzung der Fachzeitschrift:
Appl. Phys. Lett.
Jahrgang/Band:
110
Seitenumfang:
5
ISSN:
0003-6951

Zusammenfassung, Abstract
Here we report on the fabrication and optical characterization of InP-based L3 photonic crystal (PhC) microcavities embedded with a medium density InAs/InP quantum dots (QDs) emitting at telecom wavelengths. The QDs are grown by solid source molecular beam epitaxy using a ripening technique. Micro-photoluminescence (mu-PL) measurements of PhC samples reveal sharp cavity modes with quality factors exceeding 8500. QDs emit highly linear-polarized light at telecom wavelengths with resolution-limited spectral linewidth below 50 mu eV. Enhanced PL intensity of QDs in PhC is observed in comparison to the PL intensity of QDs in bulk semiconductors. The combination of excitation power-dependent and polarization-resolved mu-PL measurements reveal the existence of an exciton-biexciton system with a small fine-structure splitting. Published by AIP Publishing.


Autor(inn)en / Herausgeber(innen)

Zuletzt aktualisiert 2020-07-02 um 11:23