Aufsatz in einer Fachzeitschrift
Postannealing of magnetic tunnel junctions with ion-bombardment-modified exchange bias



Details zur Publikation
Autor(inn)en:
Höink, V.; Sacher, M.; Schmalhorst, J.; Reiss, G.; Engel, D.; Junk, D.; Ehresmann, A.
Publikationsjahr:
2005
Zeitschrift:
Applied Physics Letters
Seitenbereich:
152102
Abkürzung der Fachzeitschrift:
Appl. Phys. Lett.
Jahrgang/Band:
86
ISSN:
0003-6951

Zusammenfassung, Abstract
The influence of a postannealing procedure on the transport properties of magnetic tunnel junctions with ion-bombardment-manipulated exchange bias is investigated. The controlled manipulation of the direction of the exchange bias field in magnetic tunnel junctions by He ion bombardment usually is accompanied by a reduction of the tunnelingmagnetoresistance and an increase in the resistance. Here, we demonstrate that it is possible to reduce these negative effects of the ion bombardment considerably by postannealing without a magnetic field. For optimized combinations of ion dose and postannealing temperature, the tunnelingmagnetoresistance recovers completely (>50% resistance change) while the exchange bias direction set by the ion bombardement is preserved.


Autor(inn)en / Herausgeber(innen)


Forschungsfelder


Zuletzt aktualisiert 2019-25-07 um 10:43