Journal article
Postannealing of magnetic tunnel junctions with ion-bombardment-modified exchange bias



Publication Details
Authors:
Höink, V.; Sacher, M.; Schmalhorst, J.; Reiss, G.; Engel, D.; Junk, D.; Ehresmann, A.
Publication year:
2005
Journal:
Applied Physics Letters
Pages range:
152102
Journal acronym:
Appl. Phys. Lett.
Volume number:
86
ISSN:
0003-6951

Abstract
The influence of a postannealing procedure on the transport properties of magnetic tunnel junctions with ion-bombardment-manipulated exchange bias is investigated. The controlled manipulation of the direction of the exchange bias field in magnetic tunnel junctions by He ion bombardment usually is accompanied by a reduction of the tunnelingmagnetoresistance and an increase in the resistance. Here, we demonstrate that it is possible to reduce these negative effects of the ion bombardment considerably by postannealing without a magnetic field. For optimized combinations of ion dose and postannealing temperature, the tunnelingmagnetoresistance recovers completely (>50% resistance change) while the exchange bias direction set by the ion bombardement is preserved.


Research Areas


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