Journal article
Direct growth of III-V quantum dots on silicon substrates: structural and optical properties



Publication Details
Authors:
Benyoucef, M.; Reithmaier, J.
Publisher:
IOP PUBLISHING LTD
Publication year:
2013
Journal:
Semiconductor Science and Technology
Pages range:
094004
Volume number:
28
Number of pages:
9
ISSN:
0268-1242

Abstract
This paper reports the recent progress obtained by direct growth of III-V semiconductor quantum dots (QDs) on flat and prepatterned silicon substrates. For the flat surfaces, we discuss the basic growth studies addressing mainly morphological and structural properties of QD-like structures using transmission electron microscopy. For the growth on prepatterned substrates, we report on the optimization of the electron beam lithography process to fabricate sub-100 nm holes in silicon and the MBE growth on prepatterned Si (1 0 0) surfaces. Finally, we report the observation of bright photoluminescence emissions from single InAs/GaAs QDs grown directly on flat silicon substrates.

Last updated on 2020-07-02 at 11:23