Aufsatz in einer Fachzeitschrift
Bright light emissions with narrow spectral linewidths from single InAs/GaAs quantum dots directly grown on silicon substrates
Details zur Publikation
Autor(inn)en: | Benyoucef, M.; Usman, M.; Reithmaier, J.
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Verlag: | AMER INST PHYSICS
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Zeitschrift: | Applied Physics Letters |
Abkürzung der Fachzeitschrift: | Appl. Phys. Lett.
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Zusammenfassung, Abstract
High brightness light emissions from single InAs/GaAs quantum dots (QDs) epitaxially grown directly on silicon substrates are realized for the first time. The grown structures contain a low quantum dot density of about 10(8) cm(-2). Low-temperature spatially resolved photoluminescence (PL) measurements illustrate bright single QD emissions with relatively sharp excitonic lines comparable to PL spectra of near-surface QDs grown on GaAs substrates. (C) 2013 American Institute of Physics. [http://dx.doi.org/10.1063/1.4799149]Autor(inn)en / Herausgeber(innen)