Journal article
Bright light emissions with narrow spectral linewidths from single InAs/GaAs quantum dots directly grown on silicon substrates



Publication Details
Authors:
Benyoucef, M.; Usman, M.; Reithmaier, J.
Publisher:
AMER INST PHYSICS
Publication year:
2013
Journal:
Applied Physics Letters
Pages range:
132101
Journal acronym:
Appl. Phys. Lett.
Volume number:
102
Number of pages:
4
ISSN:
0003-6951

Abstract
High brightness light emissions from single InAs/GaAs quantum dots (QDs) epitaxially grown directly on silicon substrates are realized for the first time. The grown structures contain a low quantum dot density of about 10(8) cm(-2). Low-temperature spatially resolved photoluminescence (PL) measurements illustrate bright single QD emissions with relatively sharp excitonic lines comparable to PL spectra of near-surface QDs grown on GaAs substrates. (C) 2013 American Institute of Physics. [http://dx.doi.org/10.1063/1.4799149]

Last updated on 2020-07-02 at 11:23