Journal article
Low-density InP-based quantum dots emitting around the 1.5 mu m telecom wavelength range



Publication Details
Authors:
Yacob, M.; Reithmaier, J.; Benyoucef, M.
Publisher:
AMER INST PHYSICS
Publication year:
2014
Journal:
Applied Physics Letters
Pages range:
022113
Journal acronym:
Appl. Phys. Lett.
Volume number:
104
Number of pages:
4
ISSN:
0003-6951

Abstract
The authors report on low-density InAs quantum dots (QDs) grown on AlGaInAs surfaces lattice matched to InP using post-growth annealing by solid-source molecular beam epitaxy. Clearly spatially separated QDs with a dot density of about 5 x 10(8) cm(-2) are obtained by using a special capping technique after the dot formation process. High-resolution micro-photoluminescence performed on optimized QD structures grown on distributed Bragg reflector exhibits single QD emissions around 1.5 mu m with narrow excitonic linewidth below 50 mu eV, which can be used as single photon source in the telecom wavelength range. (C) 2014 AIP Publishing LLC.

Last updated on 2020-07-02 at 11:23