Aufsatz in einer Fachzeitschrift
Low-density InP-based quantum dots emitting around the 1.5 mu m telecom wavelength range



Details zur Publikation
Autor(inn)en:
Yacob, M.; Reithmaier, J.; Benyoucef, M.
Verlag:
AMER INST PHYSICS
Publikationsjahr:
2014
Zeitschrift:
Applied Physics Letters
Seitenbereich:
022113
Abkürzung der Fachzeitschrift:
Appl. Phys. Lett.
Jahrgang/Band:
104
Seitenumfang:
4
ISSN:
0003-6951

Zusammenfassung, Abstract
The authors report on low-density InAs quantum dots (QDs) grown on AlGaInAs surfaces lattice matched to InP using post-growth annealing by solid-source molecular beam epitaxy. Clearly spatially separated QDs with a dot density of about 5 x 10(8) cm(-2) are obtained by using a special capping technique after the dot formation process. High-resolution micro-photoluminescence performed on optimized QD structures grown on distributed Bragg reflector exhibits single QD emissions around 1.5 mu m with narrow excitonic linewidth below 50 mu eV, which can be used as single photon source in the telecom wavelength range. (C) 2014 AIP Publishing LLC.


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Zuletzt aktualisiert 2020-07-02 um 11:23

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