Aufsatz in einer Fachzeitschrift
Electron and hole g factors in InAs/InAlGaAs self-assembled quantum dots emitting at telecom wavelengths



Details zur Publikation
Autor(inn)en:
Belykh, V.; Greilich, A.; Yakovlev, D.; Yacob, M.; Reithmaier, J.; Benyoucef, M.; Bayer, M.
Verlag:
AMER PHYSICAL SOC
Publikationsjahr:
2015
Zeitschrift:
Physical Review B
Seitenbereich:
165307
Abkürzung der Fachzeitschrift:
Phys. Rev.
Jahrgang/Band:
92
Seitenumfang:
6
ISSN:
1098-0121

Zusammenfassung, Abstract
We extend the range of quantum dot (QD) emission energies where electron and hole g factors have been measured to the practically important telecom range. The spin dynamics in InAs/In0.53Al0.24Ga0.23As self-assembled QDs with emission wavelengths at about 1.6 mu m grown on InP substrate is investigated by pump-probe Faraday rotation spectroscopy in a magnetic field. Pronounced oscillations on two different frequencies, corresponding to the QD electron and hole spin precessions about the field, are observed from which the corresponding g factors are determined. The electron g factor of about -1.9 has the largest negative value so far measured for III-V QDs by optical methods. This value, as well as the g factors reported for other III-V QDs, differ from those expected for bulk semiconductors at the same emission energies, and this difference increases significantly for decreasing energies.


Autor(inn)en / Herausgeber(innen)

Zuletzt aktualisiert 2020-07-02 um 11:23