Journal article
Thermal exchange bias field drifts after 10 keV He ion bombardment: Storage temperature dependence and initial number of coupling sites



Publication Details
Authors:
Schmidt, C.; Weis, T.; Engel, D.; Ehresmann, A.
Publication year:
2011
Journal:
Journal of Applied Physics
Pages range:
113911
Volume number:
110
ISSN:
0021-8979

Abstract
Sputter deposited Mn83Ir17(30 nm)/Co70Fe30(10 nm)/Ta thin films have been investigated for their thermal exchange bias field drift at different storage temperatures after 10 keV He+ ion bombardment in an externally applied in-plane magnetic field. It is experimentally shown that the drift coefficient in an intermediate time interval, as given in a recently developed model, is proportional to T and proportional to the initial number of coupling sites in the polycrystallineexchange bias layer system used.


Research Areas


Last updated on 2019-06-05 at 11:08