Aufsatz in einer Fachzeitschrift
GaInAs/(Al)GaAs quantum-dot lasers with high wavelength stability



Details zur Publikation
Autor(inn)en:
Pavelescu, E.; Gilfert, C.; Reithmaier, J.
Publikationsjahr:
2008
Zeitschrift:
Semiconductor Science and Technology
Seitenbereich:
0
Jahrgang/Band:
23
ISSN:
0268-1242

Zusammenfassung, Abstract
A 920 nm InGaAs/(Al) GaAs high-power quantum-dot laser material was developed with optimized geometric parameters, i.e., dot size, dot density and size distribution, and an appropriate laser design to allow an internal temperature compensation of the emission wavelength by a tailored spectral gain profile. The laser structure was grown by solid source molecular-beam epitaxy and consisted in a separate confinement heterostructure design with a large optical cavity. Due to the cavity length dependence of the total cavity losses, the operation point is shifted and reached a very low temperature coefficient of 0.081 nm K-1 for a cavity length of 2.6 mm.

Zuletzt aktualisiert 2019-01-11 um 16:06