Journal article
Laser ablation thresholds of silicon for different pulse durations: theory and experiment



Publication Details
Authors:
Jeschke, H.; Garcia, M.; Lenzner, M.; Bonse, J.; Krüger, J.; Kautek, W.
Publisher:
ELSEVIER SCIENCE BV
Publication year:
2002
Journal:
Applied Surface Science
Pages range:
839-844
Volume number:
197
Start page:
839
End page:
844
Number of pages:
6
ISSN:
0169-4332

Abstract
The ultrafast laser ablation of silicon has been investigated experimentally and theoretically. The theoretical description is based on molecular dynamics (MD) simulations combined with a microscopic electronic model. We determine the thresholds of melting and ablation for two different pulse durations tau = 20 and 500 fs. Experiments have been performed using 100 Ti:Sapphire laser pulses per spot in air environment. The ablation thresholds were determined for pulses with a duration of 25 and 400 fs, respectively. Good agreement is obtained between theory and experiment. (C) 2002 Elsevier Science B.V. All rights reserved.


Keywords
laser ablation, pulse duration, threshold of silicon


Authors/Editors

Last updated on 2019-14-03 at 01:02