Aufsatz in einer Fachzeitschrift
Magnetoresistive field-effect transistors based on organic donor/acceptor blends



Details zur Publikation
Autor(inn)en:
Reichert, T.; Saragi, T.; Salbeck, J.
Publikationsjahr:
2012
Zeitschrift:
RSC Advances
Seitenbereich:
7388-7390
Jahrgang/Band:
2
ISSN:
2046-2069

Zusammenfassung, Abstract
We present magnetoresistive field-effect transistors, which are sensitive to external magnetic fields as low as 1.7 mT. The magnetosensitivity is achieved through the mixture of electron acceptor 1,4,5,8,9,11-hexaazatriphenylene hexacarbonitrile (HAT-CN) with electron donor 2,2',7,7'-tetrakis-(N,N-di-p-methylphenylamino)-9,9'-spirobifluorene (Spiro-TTB), which leads to magnetic-field-sensitive intermolecular radical pair states.These states are responsible for the magnetoresistance effect in Spiro-TTB-HAT-CN blends.


Autor(inn)en / Herausgeber(innen)

Zuletzt aktualisiert 2019-01-11 um 16:04