Journal article
Magnetoresistive field-effect transistors based on organic donor/acceptor blends



Publication Details
Authors:
Reichert, T.; Saragi, T.; Salbeck, J.
Publication year:
2012
Journal:
RSC Advances
Pages range:
7388-7390
Volume number:
2
ISSN:
2046-2069

Abstract
We present magnetoresistive field-effect transistors, which are sensitive to external magnetic fields as low as 1.7 mT. The magnetosensitivity is achieved through the mixture of electron acceptor 1,4,5,8,9,11-hexaazatriphenylene hexacarbonitrile (HAT-CN) with electron donor 2,2',7,7'-tetrakis-(N,N-di-p-methylphenylamino)-9,9'-spirobifluorene (Spiro-TTB), which leads to magnetic-field-sensitive intermolecular radical pair states.These states are responsible for the magnetoresistance effect in Spiro-TTB-HAT-CN blends.

Last updated on 2019-01-11 at 16:04