Journal article
Nanostructured hybrid material based on highly mismatched III-V nanocrystals fully embedded in silicon



Publication Details
Authors:
Benyoucef, M.; Alzoubi, T.; Reithmaier, J.; Wu, M.; Trampert, A.
Publisher:
WILEY-V C H VERLAG GMBH
Publication year:
2014
Journal:
Physica Status Solidi (A)
Pages range:
817-822
Volume number:
211
Start page:
817
End page:
822
Number of pages:
6
ISSN:
1862-6300

Abstract
InAs quantum dots were directly grown on (100) planar silicon surfaces and embedded in a defect-free silicon matrix after a multi-step silicon overgrowth and annealing process performed by molecular beam epitaxy. Detailed high-resolution transmission electron microscope investigations allow to follow within several steps the formation process of nearly fully relaxed InAs nanocrystals embedded in a defect-free and planar silicon layer. The lattice mismatch between InAs and Si is almost fully accommodated by closed misfit dislocation loops at the III-V silicon interface, which suppresses the generation of threading dislocations in the embedding silicon matrix. InAs QDs embedded in defect-free silicon.


Keywords
III-V semiconductors, molecular beam epitaxy, quantum dots, silicon substrates, transmission electron microscopy

Last updated on 2020-07-02 at 11:23