Aufsatz in einer Fachzeitschrift
Magnetic-field effects in illuminated tetracene field-effect transistors



Details zur Publikation
Autor(inn)en:
Saragi, T.; Reichert, T.
Publikationsjahr:
2012
Zeitschrift:
Applied Physics Letters
Seitenbereich:
073304/1-073304/4
Abkürzung der Fachzeitschrift:
Appl. Phys. Lett.
Jahrgang/Band:
100
ISSN:
0003-6951

Zusammenfassung, Abstract
We report on magnetic-field effects in illuminated tetracene field-effect transistors. A decrease inthe photocurrent is observed when an external magnetic field is applied. In this case, the resistanceof the conducting channel increases by up to 0.75%, which leads to positive magnetoresistance.This can be attributed to: (1) A magnetic field-induced decrease in the interaction rate betweentriplet excitons and trapped holes. (2) The coupling between the singlet and the triplet manifold ofstates is decreased in a magnetic field and, hence, the singlet exciton fission and triplet excitonfusion rate constants are reduced.


Autor(inn)en / Herausgeber(innen)

Zuletzt aktualisiert 2019-01-11 um 16:05