Finite element analysis of epitaxial lateral overgrown GaN: Voids at the coalescence boundary - Research Information System | University of Kassel

Journal article

Finite element analysis of epitaxial lateral overgrown GaN: Voids at the coalescence boundary

Publication Details

Authors:

Benyoucef, M.; Kuball, M.; Hillmann, G.; Wisnom, M.; Beaumont, B.; Gibart, P.

Publication year:

2001

Journal:

Applied Physics Letters

Pages range:

4127-4129

Journal acronym:

Appl. Phys. Lett.

Volume number:

Issue number:

ISSN:

0003-6951

DOI:	http://dx.doi.org/10.1063/1.1426276

Authors/Editors

Last updated on 2020-07-02 at 11:23