Aufsatz in einer Fachzeitschrift
Photoinduced sign change of magnetoresistance in field-effect transistors based on a bipolar molecular glass



Details zur Publikation
Autor(inn)en:
Reichert, T.; Salbeck, J.; Bruhn, C.; Saragi, T.; Scheffler, A.; Tatarov, E.; Fuhrmann-Lieker, T.; Ueberschaer, R.
Verlag:
The Royal Society of Chemistry
Publikationsjahr:
2013
Zeitschrift:
Chemical Communications
Seitenbereich:
4564-4566
Jahrgang/Band:
49
ISSN:
1359-7345

Zusammenfassung, Abstract
The application of a novel bipolar molecular glass in field-effect transistors leads to devices with photoinduced magnetoresistance (MR) sign change. In darkness a low external magnetic field increases the resistance (positive MR up to +0.1%){,} while a magnetic-field induced resistance decrease (negative MR up to -6.5%) can be achieved under illumination.

Zuletzt aktualisiert 2019-25-07 um 11:22