Journal article
Photoinduced sign change of the magnetoresistance in field-effect transistors based on a bipolar molecular glass



Publication Details
Authors:
Tatarov, E.; Reichert, T.; Saragi, T.; Scheffler, A.; Ueberschaer, R.; Bruhn, C.; Fuhrmann-Lieker, T.; Salbeck, J.
Publication year:
2013
Journal:
Chemical communications (Cambridge, England)
Pages range:
4564-4566
Volume number:
49
Issue number:
40

Abstract
The application of a novel bipolar molecular glass in field-effect transistors leads to devices with photoinduced magnetoresistance (MR) sign change. In darkness a low external magnetic field increases the resistance (positive MR up to +0.1{\%}), while a magnetic-field induced resistance decrease (negative MR up to -6.5{\%}) can be achieved under illumination.


Research Areas


Last updated on 2020-07-05 at 11:23