Aufsatz in einer Fachzeitschrift
Photoinduced sign change of the magnetoresistance in field-effect transistors based on a bipolar molecular glass



Details zur Publikation
Autor(inn)en:
Tatarov, E.; Reichert, T.; Saragi, T.; Scheffler, A.; Ueberschaer, R.; Bruhn, C.; Fuhrmann-Lieker, T.; Salbeck, J.
Publikationsjahr:
2013
Zeitschrift:
Chemical communications (Cambridge, England)
Seitenbereich:
4564-4566
Jahrgang/Band:
49
Heftnummer:
40

Zusammenfassung, Abstract
The application of a novel bipolar molecular glass in field-effect transistors leads to devices with photoinduced magnetoresistance (MR) sign change. In darkness a low external magnetic field increases the resistance (positive MR up to +0.1{\%}), while a magnetic-field induced resistance decrease (negative MR up to -6.5{\%}) can be achieved under illumination.


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Zuletzt aktualisiert 2020-07-05 um 11:23