Mohamed Benyoucef - Forschungsinformationssystem | Universität Kassel - CONVERIS Forschungsinformationsystem

Go to Header Go to Navigation Go to Content Go to Footer

Prof. Dr. Mohamed Benyoucef

Projektleitung

08/2021 - 07/2024	Quantenrepeater.Link (QR.X)
01/2019 - 08/2022	DFG-Entwicklung von deterministischen Quantenlichtquellen aus InP-basierten Quantenpunkten im Telekom-C-Band (DeLiCom)
2019 - 2022	LOEWE-Skaliebare Molekulare Quantenbits (SMolBits)
10/2018 - 12/2023	Skalierbare Molekulare Quantenbits (SMolBits)
2018 - 2021	BMBF-Quantum Link Extended (Q.Link.X)
05/2014 - 04/2018	BMBF-Quantenkommunikation (Q.com)
2010 - 2013	BMBF-InP basierte Quantenpunktstrukturen und NV-Zentren in nanokristallinen Diamantstrukturen für die optische Quantenkommunikation (QuaHL-Rep)

Publikationen

Go to first page

Go to previous page

7 von 7

Go to next page

Go to last page

2001	Marinelli, C., Bordovsky, M., Sargent, L.J., Gioannini, M., Rorison, J.M., Penty, R.V., White, I.H., Heard, P.J., Benyoucef, M., Kuball, M., Hasnain, G., Takeuchi, T., Schneider, R.P., 2001. Design and performance analysis of deep-etch air/nitride distributed Bragg reflector gratings for AlInGaN laser diodes. Applied Physics Letters 79, 4076–4078. https://doi.org/10.1063/1.1424061
2001	Benyoucef, M., Kuball, M., Hillmann, G., Wisnom, M., Beaumont, B., Gibart, P., 2001. Finite element analysis of epitaxial lateral overgrown GaN: Voids at the coalescence boundary. Applied Physics Letters 79, 4127–4129. https://doi.org/10.1063/1.1426276
2001	Kuball, M., Benyoucef, M., Beaumont, B., Gibart, P., 2001. Raman mapping of epitaxial lateral overgrown GaN: Stress at the coalescence boundary. MRS Proceedings 90, 3656–3658. https://doi.org/10.1063/1.1400092
2001	Kuball, M., Benyoucef, M., Beaumont, B., Gibart, P., 2001. Stress at the Coalescence Boundary of Epitaxial Lateral Overgrown GaN. physica status solidi (a) – applications and materials science 188, 747–750. https://doi.org/10.1002/1521-396x(200112)188:2<747::aid-pssa747>3.3.co;2-n
1999	Kuball, M., Benyoucef, M., Morrissey, F.H., Foxon, C.T., 1999. Focused Ion Beam Etching of Nanometer-Size GaN/AlGaN Device Structures and their Optical Characterization by Micro-Photoluminescence/Raman Mapping. MRS Online Proceedings Library 595, Art. 123. https://doi.org/10.1557/proc-595-f99w12.3
1999	Kuball, M., Morrissey, F.H., Benyoucef, M., Harrison, I., Korakakis, D., Foxon, C.T., 1999. Nano-Fabrication of GaN Pillars Using Focused Ion Beam Etching. physica status solidi (a) – applications and materials science 176, 355–358. https://doi.org/10.1002/(sici)1521-396x(199911)176:1<355::aid-pssa355>3.0.co;2-i
1999	Young, W.T., Silva, S.R.P., Benyoucef, M., Kuball, M., Anguita, J.V., Shannon, J.M., Homewood, K.P., Sealy, B.J., 1999. The Growth of Gallium Nitride Films Produced by Reactive Sputtering at Low Temperature. physica status solidi (a) – applications and materials science 176, 319–322. https://doi.org/10.1002/(sici)1521-396x(199911)176:1<319::aid-pssa319>3.3.co;2-9