Mohamed Benyoucef - Research Information System | University of Kassel - CONVERIS Research Information System

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Prof. Dr. Mohamed Benyoucef

Projects as Principal Investigator

08/2021 - 07/2024	QR.X
01/2019 - 08/2022	DFG-Development of deterministic quantum-light sources from InP-based quantum dots in the telecom c-band”
2019 - 2022	LOEWE-Scalable Molecular Quantum Bits (SMolBits)
10/2018 - 12/2023	Scalable Molecular Quantum Bits (SMolBits)
2018 - 2021	Q.Link.Extension
05/2014 - 04/2018	BMBF-Quantenkommunikation (Q.com)
2010 - 2013	BMBF-InP basierte Quantenpunktstrukturen und NV-Zentren in nanokristallinen Diamantstrukturen für die optische Quantenkommunikation (QuaHL-Rep)

Publications

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2016	Reithmaier, J.P., Benyoucef, M., 2016. III-V Integration on Si for Photonics, in: IEEE (Hrsg.), 2016 IEEE Photonics Society Summer Topical Meeting Series (SUM). S. 189–190. https://doi.org/10.1109/PHOSST.2016.7548793
2016	Benyoucef, M., Reithmaier, J.P., 2016. (Invited) III-V / Si Integration for Photonics. ECS Transactions 72, 171–179. https://doi.org/10.1149/07204.0171ecst
2016	Belykh, V.V., Yakovlev, D.R., Schindler, J.J., Zhukov, E.A., Semina, M.A., Yacob, M., Reithmaier, J.P., Benyoucef, M., Bayer, M., 2016. Large anisotropy of electron and hole g factors in infrared-emitting InAs/InAlGaAs self-assembled quantum dots. Physical Review B 93, 125302. https://doi.org/10.1103/PhysRevB.93.125302
2015	Belykh, V.V., Greilich, A., Yakovlev, D.R., Yacob, M., Reithmaier, J.P., Benyoucef, M., Bayer, M., 2015. Electron and hole g factors in InAs/InAlGaAs self-assembled quantum dots emitting at telecom wavelengths. Physical Review B 92, 165307. https://doi.org/10.1103/PhysRevB.92.165307
2015	Wu, M., Trampert, A., Al-Zoubi, T., Benyoucef, M., Reithmaier, J.P., 2015. Interface structure and strain state of InAs nano-clusters embedded in silicon. Acta Materialia 2015, 133–139. https://doi.org/10.1016/j.actamat.2015.02.042
2015	Usman, M., Reithmaier, J.P., Benyoucef, M., 2015. Site-controlled growth of GaAs nanoislands on pre-patterned silicon substrates. Physica Status Solidi (A) 2015, 443. https://doi.org/10.1002/pssa.201431459
2014	Yacob, M., Reithmaier, J.P., Benyoucef, M., 2014. Low-density InP-based quantum dots emitting around the 1.5 mu m telecom wavelength range. Applied Physics Letters 104, 022113. https://doi.org/10.1063/1.4861940
2014	Benyoucef, M., Alzoubi, T., Reithmaier, J.P., Wu, M., Trampert, A., 2014. Nanostructured hybrid material based on highly mismatched III-V nanocrystals fully embedded in silicon. physica status solidi (a) – applications and materials science 211, 817–822. https://doi.org/10.1002/pssa.201330395
2013	Benyoucef, M., Usman, M., Reithmaier, J.P., 2013. Bright light emissions with narrow spectral linewidths from single InAs/GaAs quantum dots directly grown on silicon substrates. Applied Physics Letters 102, 132101. https://doi.org/10.1063/1.4799149
2013	Benyoucef, M., Reithmaier, J.P., 2013. Direct growth of III-V quantum dots on silicon substrates: structural and optical properties. Semiconductor Science and Technology 28, 094004. https://doi.org/10.1088/0268-1242/28/9/094004