Conference proceedings article
Simplified Calculation of Parasitic Elements and Mutual Couplings of Wide-bandgap Power Semiconductor Modules
Publication Details
Authors: | Ali, M.; Friebe, J.; Mertens, A. |
Editor: | IEEE |
Publisher: | Institute of Electrical and Electronics Engineers Inc |
Place: | United States |
Publication year: | 2020 |
Pages range : | 1-10 |
Book title: | 2020 22nd European Conference on Power Electronics and Applications |
DOI-Link der Erstveröffentlichung: |
Abstract
This paper presents a simplified calculation of parasitic elements (LC) and mutual couplings between parasitics of wide-bandgap (WBG) power semiconductor modules based on analytical equations and on 3D FEM. A simplified parallel plate capacitor is derived from stray fields of different plate surfaces. The simple structures e. g. two parallel round wires with different directions of current are considered to calculate the parasitic inductance and the magnetic coupling. The analytical models are verified by ANSYS Q3D results. This method includes stray fields of capacitive and inductive parasitic structures based on a simplified geometric approach. The package of a SiC-MOSFET half-bridge power module is 3D-modeled and the parasitic elements are extracted. The analytical models are verified by numerical results. At last the influence of parasitic elements and mutual couplings on the switching characteristics is analyzed.
This paper presents a simplified calculation of parasitic elements (LC) and mutual couplings between parasitics of wide-bandgap (WBG) power semiconductor modules based on analytical equations and on 3D FEM. A simplified parallel plate capacitor is derived from stray fields of different plate surfaces. The simple structures e. g. two parallel round wires with different directions of current are considered to calculate the parasitic inductance and the magnetic coupling. The analytical models are verified by ANSYS Q3D results. This method includes stray fields of capacitive and inductive parasitic structures based on a simplified geometric approach. The package of a SiC-MOSFET half-bridge power module is 3D-modeled and the parasitic elements are extracted. The analytical models are verified by numerical results. At last the influence of parasitic elements and mutual couplings on the switching characteristics is analyzed.
Keywords
3D Packaging Magnetic Coupling Parasitic Capacitance Parasitic Inductance SiC Module
