Beitrag in einem Tagungsband
Impact of GaN-HEMT Combinations with Different Die-Size on the Efficiency of a Single-Phase Photovoltaic Differential Buck Inverter
Details zur Publikation
Autor(inn)en: | Brinker, T.; Mandler, P.; Friebe, J. |
Herausgeber: | European Centre for Creative Economy |
Verlag: | Institute of Electrical and Electronics Engineers Inc |
Verlagsort / Veröffentlichungsort: | United States |
Publikationsjahr: | 2022 |
Seitenbereich: | 1-8 |
Buchtitel: | 2022 IEEE Energy Conversion Congress and Exposition ECCE 2022 |
ISBN: | 978-1-7281-9388-5 |
DOI-Link der Erstveröffentlichung: |
Zusammenfassung, Abstract
In transformerless single-phase photovoltaic (PV) power systems leakage currents are a well-known issue as these can cause electromagnetic interference (EMI) problems which are limited by standards. To prevent this two hybrid unipolar modulation techniques with only constant or grid-frequency common mode (cm) voltage variations have been identified for a differential buck inverter. Each of these modulation schemes causes a different asymmetric switching- and conduction loss distribution between high- and low-side transistors. Therefore a selection of transistors with different die-sizes for high-side and low-side transistors appears to be advantageous regarding various factors such as inverter efficiency total die-size and heat distribution. The objective of this paper is to investigate the effect of different high-side and low-side transistor combinations on the total loss and to identify beneficial combinations within a product line of GaN-HEMTs.
In transformerless single-phase photovoltaic (PV) power systems leakage currents are a well-known issue as these can cause electromagnetic interference (EMI) problems which are limited by standards. To prevent this two hybrid unipolar modulation techniques with only constant or grid-frequency common mode (cm) voltage variations have been identified for a differential buck inverter. Each of these modulation schemes causes a different asymmetric switching- and conduction loss distribution between high- and low-side transistors. Therefore a selection of transistors with different die-sizes for high-side and low-side transistors appears to be advantageous regarding various factors such as inverter efficiency total die-size and heat distribution. The objective of this paper is to investigate the effect of different high-side and low-side transistor combinations on the total loss and to identify beneficial combinations within a product line of GaN-HEMTs.
Schlagwörter
Analytical losses computation Gallium Nitride (GaN) high-electron mobility transistor (HEMT) micro-inverter modulation scheme photovoltaic single-phase
