Beitrag in einem Tagungsband
A Hybrid Active Neutral Point Clamped Converter consisting of Si IGBTs and GaN HEMTs for Auxiliary Systems of Electric Aircraft
Details zur Publikation
Autor(inn)en: | Fauth, L.; Beckemeier, C.; Friebe, J. |
Herausgeber: | European Centre for Creative Economy |
Verlag: | Institute of Electrical and Electronics Engineers Inc |
Verlagsort / Veröffentlichungsort: | United States |
Publikationsjahr: | 2021 |
Seitenbereich: | 1917-1923 |
Buchtitel: | 2021 IEEE Energy Conversion Congress and Exposition (ECCE) |
Titel der Buchreihe: | IEEE Energy Conversion Congress and Exposition |
ISBN: | 978-1-7281-5134-2 |
DOI-Link der Erstveröffentlichung: |
Zusammenfassung, Abstract
Hybrid inverter combine conventional silicon switches and wide bandgap switches according to their respective parameters to optimize their usability. Active neutral point clamped inverter can be divided into a high frequency and a low frequency section making them ideally suited for a hybrid approach. In this paper a hybrid active neutral point clamped inverter combining silicon IGBTs and GaN transistors is presented. The application of additional decoupling capacitors for the high frequency bridge is shown. Furthermore a possible combination of Super Junction MOSFETs and silicon IGBTs in the low frequency section to further optimize the design is introduced. To enhance the current range and reduce filter effort parallel GaN stages with interleaved modulation are used.
Hybrid inverter combine conventional silicon switches and wide bandgap switches according to their respective parameters to optimize their usability. Active neutral point clamped inverter can be divided into a high frequency and a low frequency section making them ideally suited for a hybrid approach. In this paper a hybrid active neutral point clamped inverter combining silicon IGBTs and GaN transistors is presented. The application of additional decoupling capacitors for the high frequency bridge is shown. Furthermore a possible combination of Super Junction MOSFETs and silicon IGBTs in the low frequency section to further optimize the design is introduced. To enhance the current range and reduce filter effort parallel GaN stages with interleaved modulation are used.
Schlagwörter
ANPC electric aircraft GaN hybrid topology interleaving
