Conference proceedings article
GaN HEMT and SiC Diode Commutation Cell based Dual-Buck Single-Phase Inverter with Premagnetized Inductors and Negative Gate Driver Turn-off Voltage
Publication Details
Authors: | Brinker, T.; Gräber, H.; Friebe, J. |
Editor: | European Centre for Creative Economy |
Publisher: | Institute of Electrical and Electronics Engineers Inc |
Place: | United States |
Publication year: | 2022 |
Pages range : | TBD |
Book title: | 24th European Conference on Power Electronics and Applications EPE 2022 ECCE Europe |
ISBN: | 978-1-6654-8700-9 |
Abstract
This paper presents a highly efficient single-phase dual-buck inverter topology for the use in photovoltaic (PV) micro inverters with specific advantages for the application of switching cells composed of Gal-lium Nitride enhancement-mode high electron mobility transistors (GaN E-HEMTs) and Silicon Carbide (SiC) diodes. For this inverter topology the opportunity to use negative gate driver turn-off voltage with-out affecting the reverse conduction loss is identified as a significant advantage in terms of efficiency and cross talk immunity. However the low magnetic utilization of the filter inductors is a well-known drawback. Therefore permanent magnet premagnetization is proposed as a way to alleviate this issue.
This paper presents a highly efficient single-phase dual-buck inverter topology for the use in photovoltaic (PV) micro inverters with specific advantages for the application of switching cells composed of Gal-lium Nitride enhancement-mode high electron mobility transistors (GaN E-HEMTs) and Silicon Carbide (SiC) diodes. For this inverter topology the opportunity to use negative gate driver turn-off voltage with-out affecting the reverse conduction loss is identified as a significant advantage in terms of efficiency and cross talk immunity. However the low magnetic utilization of the filter inductors is a well-known drawback. Therefore permanent magnet premagnetization is proposed as a way to alleviate this issue.
Keywords
Gallium Nitride (GaN) Magentic device Silicon Carbide (SiC) Single phase system Switching losses
