Journal article
Postannealing of magnetic tunnel junctions with ion-bombardment-modified exchange bias
Publication Details
Authors: | Höink, V.; Sacher, M.; Schmalhorst, J.; Reiss, G.; Engel, D.; Junk, D.; Ehresmann, A. |
Publication year: | 2005 |
Journal: | Applied Physics Letters |
Pages range : | 152102 |
Journal acronym: | Appl. Phys. Lett. |
Volume number: | 86 |
ISSN: | 0003-6951 |
URN / URL: |
Abstract
The influence of a postannealing procedure on the transport properties of magnetic tunnel junctions with ion-bombardment-manipulated exchange bias is investigated. The controlled manipulation of the direction of the exchange bias field in magnetic tunnel junctions by He ion bombardment usually is accompanied by a reduction of the tunnelingmagnetoresistance and an increase in the resistance. Here, we demonstrate that it is possible to reduce these negative effects of the ion bombardment considerably by postannealing without a magnetic field. For optimized combinations of ion dose and postannealing temperature, the tunnelingmagnetoresistance recovers completely (>50% resistance change) while the exchange bias direction set by the ion bombardement is preserved.
The influence of a postannealing procedure on the transport properties of magnetic tunnel junctions with ion-bombardment-manipulated exchange bias is investigated. The controlled manipulation of the direction of the exchange bias field in magnetic tunnel junctions by He ion bombardment usually is accompanied by a reduction of the tunnelingmagnetoresistance and an increase in the resistance. Here, we demonstrate that it is possible to reduce these negative effects of the ion bombardment considerably by postannealing without a magnetic field. For optimized combinations of ion dose and postannealing temperature, the tunnelingmagnetoresistance recovers completely (>50% resistance change) while the exchange bias direction set by the ion bombardement is preserved.
