Journal article
Single-photon emission from single InGaAs/GaAs quantum dots grown by droplet epitaxy at high substrate temperature
Publication Details
Authors: | Benyoucef, M.; Zuerbig, V.; Reithmaier, J.; Kroh, T.; Schell, A.; Aichele, T.; Benson, O. |
Publication year: | 2012 |
Journal: | Nanoscale Research Letters |
Pages range : | 493 |
Volume number: | 7 |
Issue number: | 1 |
ISSN: | 1931-7573 |
eISSN: | 1556-276X |
DOI-Link der Erstveröffentlichung: |
Abstract
The authors report single-photon emission from InGaAs quantum dots grown by droplet epitaxy on (100) GaAs substrates using a solid-source molecular beam epitaxy system at elevated substrate temperatures above 400°C without post-growth annealing. High-resolution micro-photoluminescence spectroscopy exhibits sharp excitonic emissions with lifetimes ranging from 0.7 to 1.1 ns. The coherence properties of the emitted photons are investigated by measuring the first-order field correlation function.
The authors report single-photon emission from InGaAs quantum dots grown by droplet epitaxy on (100) GaAs substrates using a solid-source molecular beam epitaxy system at elevated substrate temperatures above 400°C without post-growth annealing. High-resolution micro-photoluminescence spectroscopy exhibits sharp excitonic emissions with lifetimes ranging from 0.7 to 1.1 ns. The coherence properties of the emitted photons are investigated by measuring the first-order field correlation function.
