Aufsatz in einer Fachzeitschrift
Direct growth of III-V quantum dots on silicon substrates: structural and optical properties
Details zur Publikation
Autor(inn)en: | Benyoucef, M.; Reithmaier, J. |
Verlag: | IOP PUBLISHING LTD |
Publikationsjahr: | 2013 |
Zeitschrift: | Semiconductor Science and Technology |
Seitenbereich: | 094004 |
Jahrgang/Band : | 28 |
Heftnummer: | 9 |
Seitenumfang: | 9 |
ISSN: | 0268-1242 |
DOI-Link der Erstveröffentlichung: |
Zusammenfassung, Abstract
This paper reports the recent progress obtained by direct growth of III-V semiconductor quantum dots (QDs) on flat and prepatterned silicon substrates. For the flat surfaces, we discuss the basic growth studies addressing mainly morphological and structural properties of QD-like structures using transmission electron microscopy. For the growth on prepatterned substrates, we report on the optimization of the electron beam lithography process to fabricate sub-100 nm holes in silicon and the MBE growth on prepatterned Si (1 0 0) surfaces. Finally, we report the observation of bright photoluminescence emissions from single InAs/GaAs QDs grown directly on flat silicon substrates.
This paper reports the recent progress obtained by direct growth of III-V semiconductor quantum dots (QDs) on flat and prepatterned silicon substrates. For the flat surfaces, we discuss the basic growth studies addressing mainly morphological and structural properties of QD-like structures using transmission electron microscopy. For the growth on prepatterned substrates, we report on the optimization of the electron beam lithography process to fabricate sub-100 nm holes in silicon and the MBE growth on prepatterned Si (1 0 0) surfaces. Finally, we report the observation of bright photoluminescence emissions from single InAs/GaAs QDs grown directly on flat silicon substrates.
