Aufsatz in einer Fachzeitschrift
Bright light emissions with narrow spectral linewidths from single InAs/GaAs quantum dots directly grown on silicon substrates
Details zur Publikation
Autor(inn)en: | Benyoucef, M.; Usman, M.; Reithmaier, J. |
Verlag: | AMER INST PHYSICS |
Publikationsjahr: | 2013 |
Zeitschrift: | Applied Physics Letters |
Seitenbereich: | 132101 |
Abkürzung der Fachzeitschrift: | Appl. Phys. Lett. |
Jahrgang/Band : | 102 |
Seitenumfang: | 4 |
ISSN: | 0003-6951 |
DOI-Link der Erstveröffentlichung: |
Zusammenfassung, Abstract
High brightness light emissions from single InAs/GaAs quantum dots (QDs) epitaxially grown directly on silicon substrates are realized for the first time. The grown structures contain a low quantum dot density of about 10(8) cm(-2). Low-temperature spatially resolved photoluminescence (PL) measurements illustrate bright single QD emissions with relatively sharp excitonic lines comparable to PL spectra of near-surface QDs grown on GaAs substrates. (C) 2013 American Institute of Physics. [http://dx.doi.org/10.1063/1.4799149]
High brightness light emissions from single InAs/GaAs quantum dots (QDs) epitaxially grown directly on silicon substrates are realized for the first time. The grown structures contain a low quantum dot density of about 10(8) cm(-2). Low-temperature spatially resolved photoluminescence (PL) measurements illustrate bright single QD emissions with relatively sharp excitonic lines comparable to PL spectra of near-surface QDs grown on GaAs substrates. (C) 2013 American Institute of Physics. [http://dx.doi.org/10.1063/1.4799149]
