Journal article
Electron and hole g factors in InAs/InAlGaAs self-assembled quantum dots emitting at telecom wavelengths
Publication Details
Authors: | Belykh, V.; Greilich, A.; Yakovlev, D.; Yacob, M.; Reithmaier, J.; Benyoucef, M.; Bayer, M. |
Publisher: | AMER PHYSICAL SOC |
Publication year: | 2015 |
Journal: | Physical Review B |
Pages range : | 165307 |
Journal acronym: | Phys. Rev. |
Volume number: | 92 |
Issue number: | 16 |
Number of pages: | 6 |
ISSN: | 1098-0121 |
DOI-Link der Erstveröffentlichung: |
Abstract
We extend the range of quantum dot (QD) emission energies where electron and hole g factors have been measured to the practically important telecom range. The spin dynamics in InAs/In0.53Al0.24Ga0.23As self-assembled QDs with emission wavelengths at about 1.6 mu m grown on InP substrate is investigated by pump-probe Faraday rotation spectroscopy in a magnetic field. Pronounced oscillations on two different frequencies, corresponding to the QD electron and hole spin precessions about the field, are observed from which the corresponding g factors are determined. The electron g factor of about -1.9 has the largest negative value so far measured for III-V QDs by optical methods. This value, as well as the g factors reported for other III-V QDs, differ from those expected for bulk semiconductors at the same emission energies, and this difference increases significantly for decreasing energies.
We extend the range of quantum dot (QD) emission energies where electron and hole g factors have been measured to the practically important telecom range. The spin dynamics in InAs/In0.53Al0.24Ga0.23As self-assembled QDs with emission wavelengths at about 1.6 mu m grown on InP substrate is investigated by pump-probe Faraday rotation spectroscopy in a magnetic field. Pronounced oscillations on two different frequencies, corresponding to the QD electron and hole spin precessions about the field, are observed from which the corresponding g factors are determined. The electron g factor of about -1.9 has the largest negative value so far measured for III-V QDs by optical methods. This value, as well as the g factors reported for other III-V QDs, differ from those expected for bulk semiconductors at the same emission energies, and this difference increases significantly for decreasing energies.
