Journal article

Thermal nano-probe



Publication Details
Authors:
Rangelow, I.

Publication year:
2001
Journal:
Microelectronic Engineering
Pages range :
737-748
Volume number:
57-8
Start page:
737
End page:
748
ISSN:
0167-9317


Abstract
The novel thermal probe presented here is based on the changes of the electrical resistivity of a nanometer-sized filament with temperature. The filament is integrated into an atomic force scanning probe piezoresistive type cantilever. Using a focused ion beam technique, the front end of the Al meander is cut through, forming an approximately 1-mum wide gap. Employing an electron beam deposition technique a sub-100 nm diameter Pt filament is deposited across the gap. The filament consists of an approximately 2- mum high loop with an additional spike deposited at the apex of the loop to improve spatial resolution. The new probe is an example on how a combination of CMOS technology, bulk and surface micromachining, focused ion beam technology and electron beam-induced deposition can be used to successfully fabricate unique nanoprobes. A spatial resolution of the order of 20 nm and a thermal resolution of 10(-3) K is obtained. (C) 2001 Elsevier Science BY All rights reserved.


Authors/Editors

Last updated on 2022-20-04 at 14:30