Journal article
Photoinduced sign change of the magnetoresistance in field-effect transistors based on a bipolar molecular glass
Publication Details
Authors: | Reichert, T.; Salbeck, J.; Bruhn, C.; Saragi, T.; Scheffler, A.; Tatarov, E.; Fuhrmann-Lieker, T.; Ueberschaer, R. |
Publisher: | The Royal Society of Chemistry |
Publication year: | 2013 |
Journal: | Chemical Communications |
Pages range : | 4564-4566 |
Volume number: | 49 |
Issue number: | 40 |
ISSN: | 1359-7345 |
DOI-Link der Erstveröffentlichung: |
URN / URL: |
Abstract
The application of a novel bipolar molecular glass in field-effect transistors leads to devices with photoinduced magnetoresistance (MR) sign change. In darkness a low external magnetic field increases the resistance (positive MR up to +0.1%){,} while a magnetic-field induced resistance decrease (negative MR up to -6.5%) can be achieved under illumination.
The application of a novel bipolar molecular glass in field-effect transistors leads to devices with photoinduced magnetoresistance (MR) sign change. In darkness a low external magnetic field increases the resistance (positive MR up to +0.1%){,} while a magnetic-field induced resistance decrease (negative MR up to -6.5%) can be achieved under illumination.
