Journal article
Correct application of Fresnel's equations for intensity analysis of angle-resolved photoemission data
Publication Details
Authors: | Matzdorf, R. |
Publication year: | 2006 |
Journal: | Surface Science |
Pages range : | 1129-1133 |
Volume number: | 600 |
Start page: | 1129 |
End page: | 1133 |
ISSN: | 0039-6028 |
Abstract
The electromagnetic field relevant for the excitation process in angle-resolved photoemission is studied. We show that Fresnel's equations together with the known bulk dielectric constants can be used to calculate the complex vector potential at the metal surface. A model is developed which accounts correctly for the special experimental geometry with focused light. It is used to calculate the variation of photoemission intensity with changing light incidence angle and polarization. Experimental data for the photoemission intensity as a function of light incidence angle are presented for direct transitions out of bulk, surface and adsorbate states at a Cu(1 1 0) surface. The comparison to our model shows that the application of copper bulk optical constants is justified even when electronic states are localized to the topmost atomic layer. (c) 2006 Elsevier B.V. All rights reserved.
The electromagnetic field relevant for the excitation process in angle-resolved photoemission is studied. We show that Fresnel's equations together with the known bulk dielectric constants can be used to calculate the complex vector potential at the metal surface. A model is developed which accounts correctly for the special experimental geometry with focused light. It is used to calculate the variation of photoemission intensity with changing light incidence angle and polarization. Experimental data for the photoemission intensity as a function of light incidence angle are presented for direct transitions out of bulk, surface and adsorbate states at a Cu(1 1 0) surface. The comparison to our model shows that the application of copper bulk optical constants is justified even when electronic states are localized to the topmost atomic layer. (c) 2006 Elsevier B.V. All rights reserved.
