Aufsatz in einer Fachzeitschrift
Laser ablation thresholds of silicon for different pulse durations: theory and experiment
Details zur Publikation
Autor(inn)en: | Jeschke, H.; Garcia, M.; Lenzner, M.; Bonse, J.; Krüger, J.; Kautek, W. |
Verlag: | ELSEVIER SCIENCE BV |
Publikationsjahr: | 2002 |
Zeitschrift: | Applied Surface Science |
Seitenbereich: | 839-844 |
Jahrgang/Band : | 197 |
Erste Seite: | 839 |
Letzte Seite: | 844 |
Seitenumfang: | 6 |
ISSN: | 0169-4332 |
Zusammenfassung, Abstract
The ultrafast laser ablation of silicon has been investigated experimentally and theoretically. The theoretical description is based on molecular dynamics (MD) simulations combined with a microscopic electronic model. We determine the thresholds of melting and ablation for two different pulse durations tau = 20 and 500 fs. Experiments have been performed using 100 Ti:Sapphire laser pulses per spot in air environment. The ablation thresholds were determined for pulses with a duration of 25 and 400 fs, respectively. Good agreement is obtained between theory and experiment. (C) 2002 Elsevier Science B.V. All rights reserved.
The ultrafast laser ablation of silicon has been investigated experimentally and theoretically. The theoretical description is based on molecular dynamics (MD) simulations combined with a microscopic electronic model. We determine the thresholds of melting and ablation for two different pulse durations tau = 20 and 500 fs. Experiments have been performed using 100 Ti:Sapphire laser pulses per spot in air environment. The ablation thresholds were determined for pulses with a duration of 25 and 400 fs, respectively. Good agreement is obtained between theory and experiment. (C) 2002 Elsevier Science B.V. All rights reserved.
Schlagwörter
laser ablation, pulse duration, threshold of silicon
