Aufsatz in einer Fachzeitschrift
Dry etching with gas chopping without rippled sidewalls
Details zur Publikation
Autor(inn)en: | Volland, B.; Rangelow, I. |
Publikationsjahr: | 1999 |
Zeitschrift: | Journal of Vacuum Science and Technology B |
Seitenbereich: | 2768-2771 |
Jahrgang/Band : | 17 |
Erste Seite: | 2768 |
Letzte Seite: | 2771 |
ISSN: | 1071-1023 |
Zusammenfassung, Abstract
In the last years, silicon micromachining techniques based on high aspect ratio reactive ion etching with gas chopping have been developed. There the gas how of etching and deposition gas precursors is chopped which results in controllable sidewall passivation and high anisotropy. However, the rippled sidewalls are a serious limit for various applications. We report on the development of a novel gas chopping etching technique (GCET) process in order to achieve a smooth (rippled free) sidewall surface. As the direct etch mask, we used a 1 or 2-mu m-thick resist layer, which was lithographically patterned. The novelty of the process consists in the replacing of the isotropic etching step by an anisotropic etching step. In this way we omit the main source for sidewall ripples. GCET combined with inductively coupled plasmas and fluorine chemistry provide very high etch rates and good control of the sidewall slope, These techniques also can be applied to conventional reactive ion etching equipment with Cl or F based plasma chemistry. However, the techniques used in this study have lower selectively (in range of 30) than the conventional GCET. A SiON/Si selectivity as high as 50 has been achieved. (C) 1999 American Vacuum Society. [S0734-211X(99)16706-4].
In the last years, silicon micromachining techniques based on high aspect ratio reactive ion etching with gas chopping have been developed. There the gas how of etching and deposition gas precursors is chopped which results in controllable sidewall passivation and high anisotropy. However, the rippled sidewalls are a serious limit for various applications. We report on the development of a novel gas chopping etching technique (GCET) process in order to achieve a smooth (rippled free) sidewall surface. As the direct etch mask, we used a 1 or 2-mu m-thick resist layer, which was lithographically patterned. The novelty of the process consists in the replacing of the isotropic etching step by an anisotropic etching step. In this way we omit the main source for sidewall ripples. GCET combined with inductively coupled plasmas and fluorine chemistry provide very high etch rates and good control of the sidewall slope, These techniques also can be applied to conventional reactive ion etching equipment with Cl or F based plasma chemistry. However, the techniques used in this study have lower selectively (in range of 30) than the conventional GCET. A SiON/Si selectivity as high as 50 has been achieved. (C) 1999 American Vacuum Society. [S0734-211X(99)16706-4].
