Journal article
Nanostructured hybrid material based on highly mismatched III-V nanocrystals fully embedded in silicon
Publication Details
Authors: | Benyoucef, M.; Alzoubi, T.; Reithmaier, J.; Wu, M.; Trampert, A. |
Publisher: | WILEY-V C H VERLAG GMBH |
Publication year: | 2014 |
Journal: | physica status solidi (a) – applications and materials science |
Pages range : | 817-822 |
Volume number: | 211 |
Start page: | 817 |
End page: | 822 |
Number of pages: | 6 |
ISSN: | 1862-6300 |
eISSN: | 1862-6319 |
DOI-Link der Erstveröffentlichung: |
Abstract
InAs quantum dots were directly grown on (100) planar silicon surfaces and embedded in a defect-free silicon matrix after a multi-step silicon overgrowth and annealing process performed by molecular beam epitaxy. Detailed high-resolution transmission electron microscope investigations allow to follow within several steps the formation process of nearly fully relaxed InAs nanocrystals embedded in a defect-free and planar silicon layer. The lattice mismatch between InAs and Si is almost fully accommodated by closed misfit dislocation loops at the III-V silicon interface, which suppresses the generation of threading dislocations in the embedding silicon matrix. InAs QDs embedded in defect-free silicon.
InAs quantum dots were directly grown on (100) planar silicon surfaces and embedded in a defect-free silicon matrix after a multi-step silicon overgrowth and annealing process performed by molecular beam epitaxy. Detailed high-resolution transmission electron microscope investigations allow to follow within several steps the formation process of nearly fully relaxed InAs nanocrystals embedded in a defect-free and planar silicon layer. The lattice mismatch between InAs and Si is almost fully accommodated by closed misfit dislocation loops at the III-V silicon interface, which suppresses the generation of threading dislocations in the embedding silicon matrix. InAs QDs embedded in defect-free silicon.
Keywords
III-V semiconductors, molecular beam epitaxy, quantum dots, silicon substrates, transmission electron microscopy
