Journal article
Dysprosium-induced nanowires on Ge(001)
Publication Details
Authors: | Lochner, M.; Bienert, R.; Kürpick, U.; Matzdorf, R. |
Publication year: | 2015 |
Journal: | Surface Science |
Pages range : | 42-47 |
Book title: | Surface Science |
Volume number: | 637-638 |
ISSN: | 0039-6028 |
DOI-Link der Erstveröffentlichung: |
Abstract
Dysprosium-induced, self-assembled nanowires on Ge(001) were studied by scanning tunneling microscopy (STM) and low energy electron diffraction (LEED). For this, submonolayers of dysprosium were deposited on Ge(001). After subsequent annealing, the surface shows a variety of structures as different kinds of wires with varying thickness, larger islands and surface defects like missing dimers and vacancy rows perpendicular to the Ge(001)-dimer rows. The structures are forming on all intact Ge(001)-terraces. In contrast to dysprosium on Si(001), on Ge(001) no wetting layer is found. In this work we focus on the thinnest nanowires, which have a width of four times the Ge(001)-lattice constant.,STM topographies of the unoccupied states show a twofold superstructure on the wires. In contrast, topographies of the occupied states show that the structure of the wires is less regular. They exhibit elevations with distances, which are multiples higher than two of the Ge(001)-surface lattice constant. Density of states mapping reveals a cell structure of the nanowires. Possible explanations for this behaviour are discussed. (C) 2015 Elsevier B.V. All rights reserved.
Dysprosium-induced, self-assembled nanowires on Ge(001) were studied by scanning tunneling microscopy (STM) and low energy electron diffraction (LEED). For this, submonolayers of dysprosium were deposited on Ge(001). After subsequent annealing, the surface shows a variety of structures as different kinds of wires with varying thickness, larger islands and surface defects like missing dimers and vacancy rows perpendicular to the Ge(001)-dimer rows. The structures are forming on all intact Ge(001)-terraces. In contrast to dysprosium on Si(001), on Ge(001) no wetting layer is found. In this work we focus on the thinnest nanowires, which have a width of four times the Ge(001)-lattice constant.,STM topographies of the unoccupied states show a twofold superstructure on the wires. In contrast, topographies of the occupied states show that the structure of the wires is less regular. They exhibit elevations with distances, which are multiples higher than two of the Ge(001)-surface lattice constant. Density of states mapping reveals a cell structure of the nanowires. Possible explanations for this behaviour are discussed. (C) 2015 Elsevier B.V. All rights reserved.
Keywords
Dysprosium, Ge(001), LEED, Nanowires, Rare earth germanides, STM
