Journal article
Solution-processed organic thin-film phototransistors based on donor/acceptor dyad
Publication Details
Authors: | Saragi, T.; Salbeck, J. |
Publication year: | 2007 |
Journal: | Applied Physics Letters |
Pages range : | 253506/1-253506/3 |
Journal acronym: | Appl. Phys. Lett. |
Volume number: | 90 |
ISSN: | 0003-6951 |
Abstract
The authors report on solution-processed organic thin-film phototransistors based on donor/acceptor dyad. The drain current increases significantly and the switch-on voltage is shifted toward positive bias as the incident light intensity is raised. Photoconductivity and the photovoltaic effect are assumed to be the underlying mechanism. Maximum responsivities of 0.3 and 0.03 A/W were obtained under irradiation at 370 nm at an incident light intensity of 1.4 mu W/cm(2) and irradiation using a tungsten halogen lamp at an incident light intensity of 0.32 mW/cm(2), respectively.(c) 2007 American Institute of Physics.
The authors report on solution-processed organic thin-film phototransistors based on donor/acceptor dyad. The drain current increases significantly and the switch-on voltage is shifted toward positive bias as the incident light intensity is raised. Photoconductivity and the photovoltaic effect are assumed to be the underlying mechanism. Maximum responsivities of 0.3 and 0.03 A/W were obtained under irradiation at 370 nm at an incident light intensity of 1.4 mu W/cm(2) and irradiation using a tungsten halogen lamp at an incident light intensity of 0.32 mW/cm(2), respectively.(c) 2007 American Institute of Physics.
