Aufsatz in einer Fachzeitschrift
Magnetic-field effects in illuminated tetracene field-effect transistors
Details zur Publikation
Autor(inn)en: | Saragi, T.; Reichert, T. |
Publikationsjahr: | 2012 |
Zeitschrift: | Applied Physics Letters |
Seitenbereich: | 073304/1-073304/4 |
Abkürzung der Fachzeitschrift: | Appl. Phys. Lett. |
Jahrgang/Band : | 100 |
ISSN: | 0003-6951 |
Zusammenfassung, Abstract
We report on magnetic-field effects in illuminated tetracene field-effect transistors. A decrease inthe photocurrent is observed when an external magnetic field is applied. In this case, the resistanceof the conducting channel increases by up to 0.75%, which leads to positive magnetoresistance.This can be attributed to: (1) A magnetic field-induced decrease in the interaction rate betweentriplet excitons and trapped holes. (2) The coupling between the singlet and the triplet manifold ofstates is decreased in a magnetic field and, hence, the singlet exciton fission and triplet excitonfusion rate constants are reduced.
We report on magnetic-field effects in illuminated tetracene field-effect transistors. A decrease inthe photocurrent is observed when an external magnetic field is applied. In this case, the resistanceof the conducting channel increases by up to 0.75%, which leads to positive magnetoresistance.This can be attributed to: (1) A magnetic field-induced decrease in the interaction rate betweentriplet excitons and trapped holes. (2) The coupling between the singlet and the triplet manifold ofstates is decreased in a magnetic field and, hence, the singlet exciton fission and triplet excitonfusion rate constants are reduced.
