Aufsatz in einer Fachzeitschrift
Ultraviolet-sensitive field-effect transistor utilized amorphous thin films of organic donor/acceptor dyad
Details zur Publikation
Autor(inn)en: | Saragi, T.; Fuhrmann-Lieker, T.; Salbeck, J. |
Publikationsjahr: | 2007 |
Zeitschrift: | Applied Physics Letters |
Seitenbereich: | 143514/1-143514/3 |
Abkürzung der Fachzeitschrift: | Appl. Phys. Lett. |
Jahrgang/Band : | 90 |
ISSN: | 0003-6951 |
Zusammenfassung, Abstract
The authors report on highly responsive ultraviolet (UV)-sensitive field-effect transistor based on amorphous thin films of organic donor/acceptor dyad. An optimal responsivity of up to 6.5 A/W can be obtained for UV light at 370 nm. High ratios of photocurrent to dark current of up to 4.3x10(3) can also be obtained. The underlying mechanism can be sufficiently explained by ultrafast photoinduced intramolecular charge transfer between the acceptor and the donor. This result offers a potential application of organic semiconductors as active materials for UV detectors. (c) 2007 American Institute of Physics.
The authors report on highly responsive ultraviolet (UV)-sensitive field-effect transistor based on amorphous thin films of organic donor/acceptor dyad. An optimal responsivity of up to 6.5 A/W can be obtained for UV light at 370 nm. High ratios of photocurrent to dark current of up to 4.3x10(3) can also be obtained. The underlying mechanism can be sufficiently explained by ultrafast photoinduced intramolecular charge transfer between the acceptor and the donor. This result offers a potential application of organic semiconductors as active materials for UV detectors. (c) 2007 American Institute of Physics.
