Journal article
Photoinduced negative magnetoresistance in 6, 13-bis (triisopropilsilylethynyl)-pentacene field-effect transistors
Publication Details
Authors: | Reichert, T.; Saragi, T. |
Publication year: | 2012 |
Journal: | Organic Electronics |
Pages range : | 377-383 |
Journal acronym: | Org. Electron. |
Volume number: | 13 |
ISSN: | 1566-1199 |
Abstract
We report on photoinduced negative organic magnetoresistance in low external magneticfields(<100 mT) in 6,13-bis(triisopropylsilylethynyl)-pentacene (TIPS-Pentacene) fieldeffecttransistors. An external magnetic field does not influence the dark current of ourdevice. In contrast, there is a significant increase in photocurrent when magnetic field isapplied to the irradiated device, which leads to negative magnetoresistance. The magnetoresistanceand photoresponse values are strongly correlated and both are influenced byapplied voltages and irradiation intensity. We attribute the observed photoinduced negativemagnetoresistance in TIPS-Pentacene field-effect transistors to the presence of electron-hole pairs under irradiation. The overall dissociation probability of electron-holepairs rises under the influence of an external magnetic field, which leads to a higher numberof free charge carriers.
We report on photoinduced negative organic magnetoresistance in low external magneticfields(<100 mT) in 6,13-bis(triisopropylsilylethynyl)-pentacene (TIPS-Pentacene) fieldeffecttransistors. An external magnetic field does not influence the dark current of ourdevice. In contrast, there is a significant increase in photocurrent when magnetic field isapplied to the irradiated device, which leads to negative magnetoresistance. The magnetoresistanceand photoresponse values are strongly correlated and both are influenced byapplied voltages and irradiation intensity. We attribute the observed photoinduced negativemagnetoresistance in TIPS-Pentacene field-effect transistors to the presence of electron-hole pairs under irradiation. The overall dissociation probability of electron-holepairs rises under the influence of an external magnetic field, which leads to a higher numberof free charge carriers.
