Aufsatz in einer Fachzeitschrift
Electrolyte-Gated n-Type Transistors Produced from Aqueous Inks of WS2 Nanosheets
Details zur Publikation
Autor(inn)en: | Higgins, T.; Finn, S.; Matthiesen, M.; Grieger, S.; Synnatschke, K.; Brohmann, M.; Rother, M.; Backes, C.; Zaumseil, J. |
Verlag: | WILEY-V C H VERLAG GMBH |
Publikationsjahr: | 2019 |
Zeitschrift: | Advanced Functional Materials |
Seitenbereich: | 1804387 |
Jahrgang/Band : | 29 |
Heftnummer: | 4 |
Seitenumfang: | 9 |
ISSN: | 1616-301X |
DOI-Link der Erstveröffentlichung: |
Zusammenfassung, Abstract
Solution-processed, low cost thin films of layered semiconductors such as transition metal dichalcogenides (TMDs) are potential candidates for future printed electronics. Here, n-type electrolyte-gated transistors (EGTs) based on porous WS2 nanosheet networks as the semiconductor are demonstrated. The WS2 nanosheets are liquid phase exfoliated to form aqueous/surfactant stabilized inks, and deposited at low temperatures (T < 120 degrees C) in ambient atmosphere by airbrushing. No solvent exchange, further additives, or complicated processing steps are required. While the EGTs are primarily n-type (electron accumulation), some hole transport is also observable. The EGTs show current modulations > 10(4) with low hysteresis, channel width-normalized on-conductances of up to 0.27 mu S mu m(-1) and estimated electron mobilities around 0.01 cm(2) V-1 s(-1). In addition, the WS2 nanosheet networks exhibit relatively high volumetric capacitance values of 30 F cm(-3). Charge transport within the network depends significantly on the applied lateral electric field and is thermally activated, which supports the notion that hopping between nanosheets is a major limiting factor for these networks and their future application.
Solution-processed, low cost thin films of layered semiconductors such as transition metal dichalcogenides (TMDs) are potential candidates for future printed electronics. Here, n-type electrolyte-gated transistors (EGTs) based on porous WS2 nanosheet networks as the semiconductor are demonstrated. The WS2 nanosheets are liquid phase exfoliated to form aqueous/surfactant stabilized inks, and deposited at low temperatures (T < 120 degrees C) in ambient atmosphere by airbrushing. No solvent exchange, further additives, or complicated processing steps are required. While the EGTs are primarily n-type (electron accumulation), some hole transport is also observable. The EGTs show current modulations > 10(4) with low hysteresis, channel width-normalized on-conductances of up to 0.27 mu S mu m(-1) and estimated electron mobilities around 0.01 cm(2) V-1 s(-1). In addition, the WS2 nanosheet networks exhibit relatively high volumetric capacitance values of 30 F cm(-3). Charge transport within the network depends significantly on the applied lateral electric field and is thermally activated, which supports the notion that hopping between nanosheets is a major limiting factor for these networks and their future application.
Schlagwörter
electrolyte-gating, field-effect transistor, semiconducting nanosheet network, transition-metal dichalcogenide, tungsten disulfide
