Journal article
Mapping Charge Transport by Electroluminescence in Chirality-Selected Carbon Nanotube Networks
Publication Details
Authors: | Jakubka, F.; Backes, C.; Gannott, F.; Mundloch, U.; Hauke, F.; Hirsch, A.; Zaumseil, J. |
Publisher: | AMER CHEMICAL SOC |
Publication year: | 2013 |
Journal: | ACS Nano |
Pages range : | 7428-7435 |
Volume number: | 7 |
Issue number: | 8 |
Start page: | 7428 |
End page: | 7435 |
Number of pages: | 8 |
ISSN: | 1936-0851 |
DOI-Link der Erstveröffentlichung: |
Abstract
We demonstrate random network single-walled carbon nanotube (SWNT) field-effect transistors (FETs) in bottom contact/top gate geometry with only five different semiconducting nanotube species that were selected by dispersion with poly(9,9-dioctylfluorene) in toluene. These FETs are highly ambipolar with balanced hole and electron mobilities and emit near-infrared light with narrow peak widths (<40 meV) and good efficiency. We spatially resolve the electroluminescence from the channel region during a gate voltage sweep and can thus trace charge transport paths through the SWNT thin film. A shift of emission intensity to large diameter nanotubes and gate-voltage-dependent photoluminescence quenching of the different nanotube species indicates excitation transfer within the network and preferential charge accumulation on small band gap nanotubes. Apart from applications as near-infrared emitters with selectable emission wavelengths and narrow line widths, these devices will help to understand and model charge transport in realistic carbon nanotube networks.
We demonstrate random network single-walled carbon nanotube (SWNT) field-effect transistors (FETs) in bottom contact/top gate geometry with only five different semiconducting nanotube species that were selected by dispersion with poly(9,9-dioctylfluorene) in toluene. These FETs are highly ambipolar with balanced hole and electron mobilities and emit near-infrared light with narrow peak widths (<40 meV) and good efficiency. We spatially resolve the electroluminescence from the channel region during a gate voltage sweep and can thus trace charge transport paths through the SWNT thin film. A shift of emission intensity to large diameter nanotubes and gate-voltage-dependent photoluminescence quenching of the different nanotube species indicates excitation transfer within the network and preferential charge accumulation on small band gap nanotubes. Apart from applications as near-infrared emitters with selectable emission wavelengths and narrow line widths, these devices will help to understand and model charge transport in realistic carbon nanotube networks.
Keywords
field-effect transistor electroluminescence, Selection, single-walled carbon nanotubes
