Journal article
A flexible method for the preparation of thin film samples for in situ TEM characterization combining shadow-FIB milling and electron beam-assisted etching
Publication Details
Authors: | Liebig, J.; Göken, M.; Richter, G.; Mačković, M.; Przybilla, T.; Spiecker, E.; Pierron, O.; Merle, B. |
Publisher: | ELSEVIER SCIENCE BV |
Publication year: | 2016 |
Journal: | Ultramicroscopy |
Pages range : | 82-88 |
Volume number: | 171 |
Start page: | 82 |
End page: | 88 |
Number of pages: | 7 |
ISSN: | 0304-3991 |
DOI-Link der Erstveröffentlichung: |
Abstract
A new method for the preparation of freestanding thin film samples for mechanical testing in transmission electron microscopes is presented. It is based on a combination of focused ion beam.(FIB) milling and electron-beam-assisted etching with xenon difluoride (XeF2) precursor gas. The use of the FIB allows for the target preparation of microstructural defects and enables well-defined sample geometries which can be easily adapted in order to meet the requirements of various testing setups. In contrast to existing FIB-based preparation approaches, the area of interest is never exposed to ion beam irradiation which preserves a pristine microstructure. The method can be applied to a wide range of thin film material systems compatible with XeF2 etching. Its feasibility is demonstrated for gold and alloyed copper thin films and its practical application is discussed. (C) 2016 Elsevier B.V. All rights reserved.
A new method for the preparation of freestanding thin film samples for mechanical testing in transmission electron microscopes is presented. It is based on a combination of focused ion beam.(FIB) milling and electron-beam-assisted etching with xenon difluoride (XeF2) precursor gas. The use of the FIB allows for the target preparation of microstructural defects and enables well-defined sample geometries which can be easily adapted in order to meet the requirements of various testing setups. In contrast to existing FIB-based preparation approaches, the area of interest is never exposed to ion beam irradiation which preserves a pristine microstructure. The method can be applied to a wide range of thin film material systems compatible with XeF2 etching. Its feasibility is demonstrated for gold and alloyed copper thin films and its practical application is discussed. (C) 2016 Elsevier B.V. All rights reserved.
Keywords
Electron-beam-assisted etching, FIB, Micromechanical testing, Thin films, XeF2
