Beitrag in einem Tagungsband
Analysis of Switching Performance and EMI Emission of SiC Inverters under the Influence of Parasitic Elements and Mutual Couplings of the Power Modules
Details zur Publikation
Autor(inn)en: | Ali, M.; Müller, J.; Friebe, J.; Mertens, A. |
Herausgeber: | IEEE |
Verlag: | Institute of Electrical and Electronics Engineers Inc |
Verlagsort / Veröffentlichungsort: | United States |
Publikationsjahr: | 2020 |
Seitenbereich: | 1-10 |
Buchtitel: | 2020 22nd European Conference on Power Electronics and Applications |
DOI-Link der Erstveröffentlichung: |
Zusammenfassung, Abstract
Parasitic elements and mutual couplings of SiC half-bridge modules strongly affect the switching characteristics of devices. They excite overshoots and oscillations that further contribute to increased EMI emissions. This paper will explain and analyze such effects on the switching performance and EMI emissions based on 3D FEM models of the module. It can be said that knowledge about the effects of parasitic elements and mutual couplings on the switching behavior is an important basis for the design guidelines of fast switching wide-bandgap (WBG) power converters. A three-phase DC-AC inverter prototype with three SiC half-bridge MOSFET modules and an EMI measurement test setup are constructed for the experiments. The experiments results are validated with simulation results.
Parasitic elements and mutual couplings of SiC half-bridge modules strongly affect the switching characteristics of devices. They excite overshoots and oscillations that further contribute to increased EMI emissions. This paper will explain and analyze such effects on the switching performance and EMI emissions based on 3D FEM models of the module. It can be said that knowledge about the effects of parasitic elements and mutual couplings on the switching behavior is an important basis for the design guidelines of fast switching wide-bandgap (WBG) power converters. A three-phase DC-AC inverter prototype with three SiC half-bridge MOSFET modules and an EMI measurement test setup are constructed for the experiments. The experiments results are validated with simulation results.
Schlagwörter
EMI Inductance Inverter Mutual couplings Parasitic Parasitic capacitance Silicon Carbide (SiC)
