Conference proceedings article

Analysis of Switching Performance and EMI Emission of SiC Inverters under the Influence of Parasitic Elements and Mutual Couplings of the Power Modules



Publication Details
Authors:
Ali, M.; Müller, J.; Friebe, J.; Mertens, A.
Editor:
IEEE
Publisher:
Institute of Electrical and Electronics Engineers Inc
Place:
United States

Publication year:
2020
Pages range :
1-10
Book title:
2020 22nd European Conference on Power Electronics and Applications


Abstract
Parasitic elements and mutual couplings of SiC half-bridge modules strongly affect the switching characteristics of devices. They excite overshoots and oscillations that further contribute to increased EMI emissions. This paper will explain and analyze such effects on the switching performance and EMI emissions based on 3D FEM models of the module. It can be said that knowledge about the effects of parasitic elements and mutual couplings on the switching behavior is an important basis for the design guidelines of fast switching wide-bandgap (WBG) power converters. A three-phase DC-AC inverter prototype with three SiC half-bridge MOSFET modules and an EMI measurement test setup are constructed for the experiments. The experiments results are validated with simulation results.


Keywords
EMI Inductance Inverter Mutual couplings Parasitic Parasitic capacitance Silicon Carbide (SiC)


Authors/Editors

Last updated on 2023-28-02 at 10:00